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Other articles related with "drain induced barrier lowering"：
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28501 |
Meng-Ying Zhang(张梦映), Zhi-Yuan Hu(胡志远), Da-Wei Bi(毕大炜), Li-Hua Dai(戴丽华), Zheng-Xuan Zhang(张正选) |
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Enhanced radiation-induced narrow channel effects in 0.13-μm PDSOI nMOSFETs with shallow trench isolation |
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Chin. Phys. B
2018 Vol.27 (2): 28501-028501
[Abstract]
(699)
[HTML 0 KB]
[PDF 469 KB]
(352)
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108503 |
Shweta Tripathi |
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A two-dimensional analytical modeling for channel potential and threshold voltage of short channel triple material symmetrical gate Stack (TMGS) DG-MOSFET |
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Chin. Phys. B
2016 Vol.25 (10): 108503-108503
[Abstract]
(586)
[HTML 1 KB]
[PDF 5433 KB]
(674)
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4456 |
Cao Quan-Jun(曹全君), Zhang Yi-Men(张义门), and Jia Li-Xin(贾立新) |
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Model and analysis of drain induced barrier lowering effect for 4H--SiC metal semiconductor field effect transistor |
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Chin. Phys. B
2009 Vol.18 (10): 4456-4459
[Abstract]
(1583)
[HTML 1 KB]
[PDF 400 KB]
(834)
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